transistors 1 publication date: november 2002 sjc00107bed 2SC1518 silicon npn epitaxial planar type for high-frequency bias oscillation of tape recorders for dc-dc converter features ? low collector-emitter saturation voltage v ce(sat) ? satisfactory operation performances and high efficiency with a low- voltage power supply absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 25 v collector-emitter voltage (base open) v ceo 20 v emitter-base voltage (collector open) v ebo 5v collector current i c 1a peak collector current i cp 1.5 a collector power dissipation p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 025v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 020v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 25 v, i e = 0 100 na collector-emitter cutoff current (base open) i ceo v ce = 20 v, i b = 01 a forward current transfer ratio h fe1 * v ce = 2 v, i c = 500 ma 90 330 ? h fe2 v ce = 2 v, i c = 1 a 50 100 ? collector-emitter saturation voltage v ce(sat) i c = 1 a, i b = 5 0 ma 0.5 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.2 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 12 20 pf (common base, input open circuited) electrical characteristics t a = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 5.9 0.2 0.7 0.1 4.9 0.2 8.6 0.2 0.7 +0.3 ?0.2 13.5 0.5 2.54 0.15 (3.2) (1.27) (1.27) 0.45 +0.2 ?0.1 0.45 +0.2 ?0.1 13 2 unit: mm 1: emitter 2: collector 3: base eiaj: sc-51 to-92l-a1 package rank q r s h fe1 90 to 155 130 to 220 185 to 330
2SC1518 2 sjc00107bed i c ? i b v be(sat) ? i c i c ? v be(sat) p c ? t a i c ? v ce v ce(sat) ? i c h fe ? i c f t ? i e c ob ? v cb 0 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambient temperature t a ( c ) 010 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 i b = 5.0 ma 4.5 ma 4.0 ma 3.5 ma 3.0 ma 2.5 ma 2.0 ma 1.5 ma 1.0 ma 0.5 ma t a = 25 c collector current i c ( a ) collector-emitter voltage v ce ( v ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 20 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 05 4 13 2 0 1.0 0.8 0.6 0.4 0.2 v ce = 2 v t a = 25 c base current i b ( ma ) collector current i c ( a ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 10 t a = ? 25 c 25 c 75 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0 1.0 0.8 0.2 0.6 0.4 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 t a = 25 c i c / i b = 20 10 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0 600 500 400 300 200 100 v ce = 2 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) ? 1 ? 10 ? 100 0 200 160 120 80 40 180 140 100 60 20 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 110100 0 50 40 30 20 10 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
2SC1518 3 sjc00107bed i cbo ? t a i ceo ? t a safe operation area 0160 40 120 80 140 20 100 60 1 10 10 2 10 3 10 4 v cb = 25 v ambient temperature t a ( c ) i cbo ( t a ) i cbo ( t a = 25 c ) 0 160 40 120 80 140 20 100 60 1 10 10 2 10 3 10 5 10 4 v ce = 20 v ambient temperature t a ( c ) i ceo ( t a ) i ceo ( t a = 25 c ) 0.1 1 10 100 0.01 10 1 0.1 single pulse t a = 25 c t = 50 ms dc i cp i c collector current i c ( a ) collector-emitter voltage v ce ( v )
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